Samsung 990 EVO M.2 2 TB PCI Express 4.0 NVMe V-NAND TLC

SKU
MZ-V9E2T0BW
Login for pricing
In stock
MZ-V9E2T0BW
Smart thermal solution
The 990 EVO's heat spreader label helps to control the temperature of the NAND chip. Samsung's cutting-edge thermal control algorithm, paired with Dynamic Thermal Guard, ensures both consistent and reliable performance. Keep your performance red-hot, not your drive.

Versatile to suit your needs
Designed to meet the demands of gaming, business and creative work. Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, it offers flexibility for current computing and what's to come. Stay on top with this all-around player.

Samsung Magician software
Make your SSD works like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's the safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Upgrade to faster sequential read speed up to 5,000 MB/s, reaching 43% faster than the previous model.

Power efficiency
70% enhanced power efficiency compared to the previous model, supporting Modern Standby and longer battery life.

Versatility
Elevate everyday performance in gaming, business, and creative work with PCIe® 4.0 x4 and PCIe® 5.0 x2 compatibility.
SKU MZ-V9E2T0BW
EAN 8806095300269
Specification
Hard drive
PCI Express interface data lanesx4
SSD capacity2 TB
Memory typeV-NAND TLC
Data transmission
Read speed5000 MB/s
Write speed4200 MB/s
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Performance
InterfacePCI Express 4.0
Component forUniversal
NVMeYes
NVMe version2.0
TBW rating1200
PCI Express interface data lanesx4
SSD capacity2 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed5000 MB/s
TRIM supportYes
Write speed4200 MB/s
Memory typeV-NAND TLC
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
PCI Express CEM revision4.0
Design
Component forUniversal
SSD form factorM.2
Features
InterfacePCI Express 4.0
Component forUniversal
NVMeYes
NVMe version2.0
TBW rating1200
PCI Express interface data lanesx4
SSD capacity2 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed5000 MB/s
TRIM supportYes
Write speed4200 MB/s
Memory typeV-NAND TLC
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
SSD form factorM.2
PCI Express CEM revision4.0
M.2 SSD size2280 (22 x 80 mm)
Power
Power consumption (write)4.7 W
Power consumption (sleep)0.005 W
Power consumption (read)5.5 W
Power consumption (idle)0.06 W
Operating voltage3.3 V
Operational conditions
Operating temperature (T-T)0 - 70 °C
Storage temperature (T-T)-40 - 85 °C
Operating relative humidity (H-H)5 - 95%
Storage relative humidity (H-H)5 - 95%
Non-operating shock1500 G
Non-operating vibration20 G
Technical details
InterfacePCI Express 4.0
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Storage temperature (T-T)-40 - 85 °C
Operating relative humidity (H-H)5 - 95%
Storage relative humidity (H-H)5 - 95%
Non-operating shock1500 G
Non-operating vibration20 G
Hardware encryptionYes
SSD form factorM.2
Warranty period5 year(s)
Weight & dimensions
Package typeBox
Width80.2 mm
Weight9 g
Height2.38 mm
Depth22.1 mm
Packaging data
Package typeBox
Manufacturer Samsung
PDF Url https://objects.icecat.biz/objects
In Stock Y